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Materials Research Society, Materials Research Society Symposium Proceedings, (309), 1993

DOI: 10.1557/proc-309-275

Materials Research Society, Materials Research Society Symposium Proceedings, (308), 1993

DOI: 10.1557/proc-308-343

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Stress Mapping Near Simulated Defects in Thin Film Wiring Using X-ray Microbeam Diffraction

Journal article published in 1993 by Patrick Dehaven, Charles Goldsmith
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

AbstractThe stress distribution about a series of deliberately fabricated defects in a Cu/Ni/Au/Cr redundant metal stack deposited on a Cr/Cu/Cr serpentine has been studied via x-ray microbeam diffraction using the sin2 ψ, technique. Strong directional anisotropies in the stress were found for both the second level nickel and copper. The extent of nickel stress relaxation from the edge of a defect far exceeded that predicted by a simple metal on substrate model. The size of the defect did not appear to significantly influence the stress distribution in the second level metal; however, the data suggest that the linewidth may influence the magnitude of the stress along the length of a line when near a defect or other sharp discontinuity.