AbstractSingle crystal (SC) CVD diamond is known to exhibit superior electronic properties than polycrystalline ones for detection applications. In our study, tested samples were grown using CVD in an ASTEX type reactor, at various microwave powers and keeping all other parameters constant. The crystalline quality and purity of the samples were investigated using Raman spectroscopy and birefringence microscopy measurements.The diamonds layers were chemically cleaned and oxidized, towards ionization chamber fabrication using Ni and Au contacts for rectifying properties. The devices electronics and detection properties were then evaluated: leakage currents were probed from I(V) measurements and the contacts behavior were tested under ⁶⁰Co source at various dose rates. Time Of Flight (TOF) and Charge Collection Efficiency (CCE) measurements were evaluated under an ²⁴¹Am alpha source and enabled the measurement of the mobility, carrier diffusion lengths and lifetime as a function of the growth parameters. Moreover the response under a UV pulsed flash lamp was probed in order to appreciate the CCE as a function of the repetition rate. The measurements demonstrated the importance of the power density during growth on the detection properties.