Published in
IOP Publishing, Semiconductor Science and Technology, 2(14), p. 181-186
DOI: 10.1088/0268-1242/14/2/013
Links
Tools
Optical study of the -GaN/GaAs interface properties as a function of MBE growth conditions
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Preprint: archiving forbidden
Postprint:
archiving forbidden
Published version:
archiving forbidden
Data provided by 