Published in
Elsevier, Journal of Crystal Growth, 2(289), p. 485-488
DOI: 10.1016/j.jcrysgro.2005.12.073
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Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy
Journal article published in 2006 by
F. Schulze,
A. Dadgar 
,
J. Bläsing,
T. Hempel,
A. Diez,
J. Christen,
A. Krost
,
J. Bläsing,
T. Hempel,
A. Diez,
J. Christen,
A. Krost
This paper was not found in any repository, but could be made available legally by the author.
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