The mechanisms involved in the diamond nucleation on 3C-SiC surfaces have been investigated using a sequential in situ approach using electron spectroscopies (XPS, XAES and ELS). Moreover, diamond crystals have been studied by HRSEM. The in situ nucleation treatment allows a high diamond nucleation density close to 4 × 1010 cm- 2. During the in situ enhanced nucleation treatment under plasma, a negative bias was applied to the sample. The formation of an amorphous carbon phase and the roughening of the 3C-SiC surface have been observed. The part of these competing mechanisms in diamond nucleation is discussed. © 2007 Elsevier B.V. All rights reserved.