Published in
ECS Meeting Abstracts, 31(MA2011-02), p. 2080-2080, 2011
DOI: 10.1149/ma2011-02/31/2080
American Institute of Physics, Journal of Vacuum Science and Technology B, 3(29), p. 032204
DOI: 10.1116/1.3581078
Links
Tools
Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors
Journal article published in 2011 by
Lu Liu,
Tsung-Sheng Kang,
David A. Cullen 
,
Lin Zhou,
Jinhyung Kim,
Chih-Yang Chang,
Erica A. Douglas,
Soohwan Jang,
David J. Smith,
S. J. Pearton,
Wayne J. Johnson,
Fan Ren
,
Lin Zhou,
Jinhyung Kim,
Chih-Yang Chang,
Erica A. Douglas,
Soohwan Jang,
David J. Smith,
S. J. Pearton,
Wayne J. Johnson,
Fan Ren
This paper is made freely available by the publisher.
Full text: Download
Published version:
archiving forbidden
Data provided by 
Abstract
Abstract not Available.