Published in
American Institute of Physics, Journal of Applied Physics, 5(109), p. 053705
DOI: 10.1063/1.3553866
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Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content
Journal article published in 2011 by
K. Köhler,
S. Müller,
P. Waltereit,
W. Pletschen,
V. Polyakov,
T. Lim,
L. Kirste,
H. P. Menner,
P. Brückner,
O. Ambacher,
C. Buchheim,
R. Goldhahn 
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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