Published in
American Institute of Physics, Journal of Applied Physics, 11(108), p. 114501
DOI: 10.1063/1.3505780
Links
Tools
Temperature rise in InGaN/GaN vertical light emitting diode on copper transferred from silicon probed by Raman scattering
Journal article published in 2010 by
Esther Alarcón-Lladó,
Surani Bin-Dolmanan,
Vivian Kai Xin Lin,
Siew Lang Teo,
Armin Dadgar 
,
Alois Krost,
Sudhiranjan Tripathy
,
Alois Krost,
Sudhiranjan Tripathy
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Data provided by 