Published in
American Institute of Physics, Applied Physics Letters, 4(90), p. 044101
DOI: 10.1063/1.2433033
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Effect of 3C-SiC(100) initial surface stoichiometry on bias enhanced diamond nucleation
Journal article published in 2007 by
J. C. Arnault,
L. Intiso,
S. Saada,
S. Delclos,
P. Bergonzo 
,
R. Polini
,
R. Polini
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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