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American Institute of Physics, Applied Physics Letters, 25(81), p. 4712

DOI: 10.1063/1.1529309

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Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

Journal article published in 2002 by O. Contreras, F. A. Ponce ORCID, J. Christen, A. Dadgar ORCID, A. Krost
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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