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IOP Publishing, Journal of Physics D: Applied Physics, 4(42), p. 045115, 2009

DOI: 10.1088/0022-3727/42/4/045115

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Characterization of the back surface reflection in InP using femtosecond luminescence up-conversion

Journal article published in 2009 by X. M. Wen ORCID, C. Lincoln, T. A. Smith ORCID, L. V. Dao, P. Hannaford
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

In this investigation we study the behaviour of the emission from back surface reflection in InP using a femtosecond resolution up-conversion technique. The contributions from the direct emission and the back surface reflection are well distinguished. The experiments show unambiguously that the secondary rise in the time evolution of the luminescence originates from back surface reflection. Furthermore the emission from back surface reflection is used for a second excitation in the semiconductor nanostructures.