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Trans Tech Publications, Solid State Phenomena, (205-206), p. 260-264, 2013

DOI: 10.4028/www.scientific.net/ssp.205-206.260

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Deep Energy Levels of Platinum-Hydrogen Complexes in Silicon

Journal article published in 2013 by Elie Badr, Peter Pichler, Gerhard Schmidt
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Hydrogen incorporated into the samples by wet chemical etching interacts with platinum and forms several energy levels in the silicon forbidden band gap. Deep-level transient spectroscopy (DLTS) on Schottky diodes reveals several platinum-hydrogen related levels inp- andn-type silicon. In then-type silicon, two new platinum-hydrogen related levels at 0.28 and 0.41 eV below the conduction band are reported. Annealing at 377 °C results in the dissociation of their corresponding platinum-hydrogen complexes.