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Wiley, Angewandte Chemie International Edition, 26(52), p. 6731-6734, 2013

DOI: 10.1002/anie.201300755

Wiley, Angewandte Chemie, 26(125), p. 6863-6866, 2013

DOI: 10.1002/ange.201300755

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The Stoichiometry of Electroless Silicon Etching in Solutions of V2O5and HF

Journal article published in 2013 by Kurt W. Kolasinski ORCID, William B. Barclay
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This paper is available in a repository.

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Abstract

Performance by an oxidant in a leading role: In the electroless etching of silicon to form nanocrystalline porous-silicon thin films, the oxidant extracts one electron from the silicon valence band to initiate etching and then a second from the conduction band to suppress H2 formation. This discovery overturns the conventional wisdom regarding the role of the oxidant in stain etching, the stoichiometry of which was derived from the UV/Vis spectra shown.