AbstractElectron holography is employed to study variations of the electrostatic crystal potential in Cu(In,Ga)Se₂ (CIGS) thin-film solar cells at different length scales: Long-range potential variations across the layer structure of the solar cell as well as inhomogeneities within the layers are analyzed by off-axis holography. In-line holography is applied to examine the local potential variation across a CIGS grain boundary. The phase reconstruction from a focal series is performed by a modified transport of intensity equation (TIE) which is optimized to reduce common artifacts. For comparison, three different microscopes of different optical configurations were used for in-line holography. Based on the results, the impact of the used microscope as well as further acquisition parameters on the in-line holography measurement is assessed. The measured potential variations are discussed considering the effect of different possible sources that may cause potential fluctuations. It is found that most of the variations are best explained by mean inner potential fluctuations rather than by inhomogeneities of the electronic properties. Finally, the present resolution limit of both methods is discussed regarding the feasibility of future electronic characterization of CIGS by holography.