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American Institute of Physics, Applied Physics Letters, 10(90), p. 102111

DOI: 10.1063/1.2711754

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Effect of Dislocations on Charge Carrier Mobility-Lifetime Product in Synthetic Single Crystal Diamond

Journal article published in 2007 by A. Lohstroh, P. J. Sellin, S. G. Wang, A. W. Davies, J. M. Parkin, R. W. Martin ORCID, P. R. Edwards ORCID
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This paper is available in a repository.

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Abstract

The authors report correlations between variations in charge transport of electrons and holes in synthetic single crystal diamond and the presence of nitrogen impurities and dislocations. The spatial distribution of these defects was imaged using their characteristic luminescence emission and compared with maps of carrier drift length measured by ion beam induced charge imaging. The images indicate a reduction of electron and hole mobility-lifetime product due to nitrogen impurities and dislocations. Very good charge transport is achieved in selected regions where the dislocation density is minimal. (c) 2007 American Institute of Physics.