Published in
IOP Publishing, Semiconductor Science and Technology, 3(30), p. 035015
DOI: 10.1088/0268-1242/30/3/035015
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Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries
Journal article published in 2015 by
S. Martin-Horcajo,
A. Wang,
A. Bosca,
M. F. Romero,
M. J. Tadjer,
A. D. Koehler,
T. J. Anderson,
F. Calle 
This paper is available in a repository.
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