Published in
American Institute of Physics, Applied Physics Letters, 21(106), p. 212106, 2015
DOI: 10.1063/1.4921926
Links
Tools
Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications
Journal article published in 2015 by
Sungjun Kim 
,
Sunghun Jung,
Min-Hwi Kim,
Seongjae Cho,
Byung-Gook Park
,
Sunghun Jung,
Min-Hwi Kim,
Seongjae Cho,
Byung-Gook Park
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Data provided by 