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Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 9(32), p. 1209-1211, 2011

DOI: 10.1109/led.2011.2160611

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BN/Graphene/BN transistors for RF applications

Journal article published in 2011 by Han Wang, Thiti Taychatanapat, Allen Long Hsu, Kenji Watanabe ORCID, Takashi Taniguchi, Pablo Jarillo-Herrero, Tomas Palacios
This paper is available in a repository.
This paper is available in a repository.

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Abstract

In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to enable the next generation of high-frequency graphene RF electronics.