Published in

American Institute of Physics, Applied Physics Letters, 22(101), p. 223110

DOI: 10.1063/1.4768294

Links

Tools

Export citation

Search in Google Scholar

Growth of In0.25Ga0.75As quantum dots on GaP utilizing a GaAs interlayer

Journal article published in 2012 by G. Stracke, A. Glacki ORCID, T. Nowozin, L. Bonato, S. Rodt, C. Prohl, A. Lenz, H. Eisele, A. Schliwa, A. Strittmatter ORCID, U. W. Pohl, D. Bimberg
This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Upload
Green circle
Postprint: archiving allowed
Upload
Orange circle
Published version: archiving restricted
Upload
Policy details
Data provided by SHERPA/RoMEO

Abstract

Coherent In0.25Ga0.75As quantum dots (QDs) are realized on GaP(001) substrates by metalorganic vapor phase epitaxy in the Stranski-Krastanow mode utilizing a thin GaAs interlayer prior to In0.25Ga0.75As deposition. Luminescence is observed between 2.0 eV and 1.83 eV, depending on the thickness of the In0.25Ga0.75As layer. The critical thickness for the two-dimensional to three-dimensional transition of the layer is determined to 0.75 to 1.0 monolayers. A mean activation energy of 489 meV for holes captured by In0.25Ga0.75As quantum dots is measured by deep-level transient spectroscopy, yielding a hole storage time of 3 µs at room temperature.