American Institute of Physics, Applied Physics Letters, 21(73), p. 3093
DOI: 10.1063/1.122683
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We show, using variable coherence transmission electron microscopy, that light soaking of amorphous hydrogenated silicon thin films leads to structural changes. We speculate that the structural changes are associated with instability in the as-deposited material. We suggest that improved immunity to Staebler–Wronski degradation could be achieved by a less-ordered material which is closer to the ideal continuous random network. © 1998 American Institute of Physics.