Ga₂O₃ photodetectors with interdigitated electrodes have been designed and fabricated, and the Ga₂O₃ area exposed to illumination acts as the active layer of the photodetector, while the area covered by Au interdigital electrode provide an arena for carrier multiplication. The photodetectors show a maximum responsivity at around 255 nm and a cutoff wavelength of 260 nm, which lies in the solar-blind region. The responsivity of the photodetector reaches 17 A/W when the bias voltage is 20 V, which corresponds to a quantum efficiency of 8228%, amongst the best value ever reported in Ga₂O₃ film based solar-blind photodetectors.