Cu₂ZnSnSe₄(CZTSe) thin films were deposited by sputtering process using powder compacted target of CuSe, ZnSe and SnSe on Corning 1737 glass for Indium-free thin film solar cell application. Film composition,structure and properties were investigated by varying deposition parameters,such as substrate temperature,film thickness and RF power in order to deposit films with a stoichiometric composition and single phase of CZTSe. At an optimal condition of experiment,substrate temperature toward 150⁰C,RF power 75W, CZTSe films near stoichiometric composition with a polycrystalline stannite single phase were successfully deposited. Film thickness was little dependency with structure and composition except optical transmittance of the films. And it was observed to have a absorption coefficient of up to 10⁴cm^-1, band gap energy of 1.5 eV, carrier concentration in order of 10¹⁹cm^-3, mobility of 10⁰cm²V^-1s^-1and resistivity of 10^-1-10³Ωcm.It was also showed that all films were identified asp-type semiconductor.