Using the nonequilibrium Green’s function method, the electronic transport in a gate-induced barrier bilayer graphene structure is investigated. Strong resonant effects are shown to result in high amplitude oscillation of conductance as a function of Fermi energy and barrier height. Beyond a small effect of negative differential conductance (with peak to valley ratio less than 2), strong oscillations of transconductance are achieved. The amplitude of such oscillations between positive and negative values may exceed 5 mS /μ m . This effect might be helpful for further development of graphene-based nanoelectronics.