American Chemical Society, ACS Applied Materials and Interfaces, 11(6), p. 8257-8262, 2014
DOI: 10.1021/am5010283
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By taking semiconductors with different band-gap energies as the active layers and controlling the electron-hole recombination region through the electric field, bias-polarity dependent ultraviolet/visible switchable light-emitting devices have been realized in Au/MgO/Mg0.49Zn0.51O/MgxZn1-xO/n-ZnO structures, of which the emission bands can be switched from ultraviolet region to orange region by changing the polarity of the applied bias. The results reported here may provide a feasible idea to multi-color switchable light-emitting devices.