Published in
Trans Tech Publications, Materials Science Forum, (264-268), p. 1145-1148
DOI: 10.4028/www.scientific.net/msf.264-268.1145
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Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AIN Buffer Layers
Journal article published in 1998 by
A. Strittmatter 
,
A. Krost,
K. Schatke,
D. Bimberg,
Y. Iseri,
J. Bl{̈a}sing,
J. Bläsing,
J. Christen
,
A. Krost,
K. Schatke,
D. Bimberg,
Y. Iseri,
J. Bl{̈a}sing,
J. Bläsing,
J. Christen
This paper is available in a repository.
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