Published in

American Chemical Society, Accounts of Chemical Research, 11(42), p. 1779-1787, 2009

DOI: 10.1021/ar800269u

Wiley-VCH Verlag, ChemInform, 16(41), 2010

DOI: 10.1002/chin.201016271

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Charge-Transfer Excitons at Organic Semiconductor Surfaces and Interfaces

Journal article published in 2009 by X.-Y. Zhu, Q. Yang, M. Muntwiler ORCID
This paper was not found in any repository; the policy of its publisher is unknown or unclear.
This paper was not found in any repository; the policy of its publisher is unknown or unclear.

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Abstract

When a material of low dielectric constant is excited electronically from the absorption of a photon, the Coulomb attraction between the excited electron and the hole gives rise to an atomic H-like quasi-particle called an exciton. The bound electron−hole pair also forms across a material interface, such as the donor/acceptor interface in an organic heterojunction solar cell; the result is a charge-transfer (CT) exciton. On the basis of typical dielectric constants of organic semiconductors and the sizes of conjugated molecules, one can estimate that the binding energy of a CT exciton across a donor/acceptor interface is 1 order of magnitude greater than kBT at room temperature (kB is the Boltzmann constant and T is the temperature). How can the electron−hole pair escape this Coulomb trap in a successful photovoltaic device?