Published in

IOP Publishing, Journal of Physics: Conference Series, (245), p. 012081, 2010

DOI: 10.1088/1742-6596/245/1/012081

Links

Tools

Export citation

Search in Google Scholar

Theoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots

Journal article published in 2010 by J. M. Llorens ORCID, A. G. Taboada, J. M. Ripalda, D. Alonso- �Alvarez ORCID, B. Al�en, J. Mart��n S�anchez, J. M. García ORCID, J. M. Garc��a, Y. Gonz�alez, A. M. S�anchez, A. M. Beltr�an, P. L. Galindo ORCID, S. I. Molina ORCID
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

Full text: Download

Red circle
Preprint: archiving forbidden
Red circle
Postprint: archiving forbidden
Green circle
Published version: archiving allowed
Upload
Policy details
Data provided by SHERPA/RoMEO

Abstract

InAs/GaAs quantum dots exposed to Sb after growth exhibit spectral changes. We study in the present paper an idealized nanostructure consisting of a homogeneous distribution of the quaternary GaInAsSb surrounded by a barrier of GaAs. We �nd that the valence band o�set is a critical parameter in modelling its electronic structure. Depending on this value, we predict a transition from type-I to type-II band alignment at a di�erent Sb concentration. The addition of Sb to reduce the transition energy while keeping a type-I alignment is only of bene�t at low Sb concentration.