MOCVD AlN layers grown in c-direction on PVT bulk AlN substrates are investigated by high-resolution photoluminescence in the energy region of the band gap. The experiments allow for observation of different donor bound exciton lines with a full width at half maximum below 0.5 meV. Assignments are suggested for the substitutional shallow donors silicon and oxygen. The visibility of an excited state of the free exciton with a hole from the highest valence band allows to determine the exciton binding energy to 52.4 meV by use of a simple hydrogen model. The resulting band gap energy is 6.094 eV at 10 K. Comparison with earlier reports on homoepitaxial AlN leads to a new identification of the bands reported there.