Published in

American Institute of Physics, Journal of Applied Physics, 6(96), p. 3302-3306, 2004

DOI: 10.1063/1.1782954

Links

Tools

Export citation

Search in Google Scholar

Coulomb blockade and negative differential conductance in metallic double-dot devices

This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Green circle
Postprint: archiving allowed
Orange circle
Published version: archiving restricted
Data provided by SHERPA/RoMEO

Abstract

The stability diagrams and simulation of finite temperature current-voltage characteristics for metallic double-dot devices, were analyzed. The systematic analysis of stability diagrams was described which depends on each of coupling capacitances for the metallic double-dot device. It was observed that the cross-couplings essentially effect both size and shape of diagram cells. The results shows that negative differential conductance (NDC) is suppressed by increasing temperature and/or introducing offset charge and is very sensitive to device parameters.