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American Institute of Physics, Journal of Applied Physics, 6(109), p. 063516

DOI: 10.1063/1.3559264

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Characterization of microstructural defects in melt grown ZnO single crystals

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This paper is available in a repository.

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Abstract

Various nominally undoped, hydrothermally or melt grown (MG) ZnO single crystals have been investigated by standard positron lifetime measurements. Furthermore, optical transmission measurements and structural characterizations have been performed; the content of hydrogen in the bound state was determined by nuclear reaction analysis. A positron lifetime of 165-167 ps, measured for a brownish MG ZnO sample containing (0.30 +/- 0.03) at.-% of bound hydrogen, matches perfectly the value found for colorless MG ZnO crystals. The edge shift, observed in the "blue light domain" of the optical absorption for the former sample with respect to the latter samples, is estimated to be 0.70 eV, and found equal to a value reported previously. The possible role of zinc interstitials is considered and discussed. Microstructure analysis by X-ray diffraction and transmission electron microscopy revealed the presence of stacking faults in MG crystals in a high concentration, which suggests these defects to be responsible for the observed positron lifetime. (C) 2011 American Institute of Physics. [doi:10.1063/1.3559264]