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phys. stat. sol. (c), 6(0), p. 1940-1949

DOI: 10.1002/pssc.200303123

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Gallium-nitride-based devices on silicon

Journal article published in 2003 by A. Dadgar ORCID, M. Poschenrieder, I. Daumiller, M. Kunze, A. Strittmatter ORCID, T. Riemann, F. Bertram, J. Bläsing, F. Schulze, A. Reiher, A. Krtschil, O. Contreras, A. Kaluza, A. Modlich, M. Kamp and other authors.
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

GaN devices on Si are interesting for low-cost, high-power devices as LEDs and FETs. Until recently, most LED and FET devices suffered from cracking and low output power and additionally, from high series resistances for vertically contacted LEDs. Here, we give a brief overview on state of the art crack-free, bright LEDs with an output power up to 0.42 mW and AlGaN/GaN FETs with an output power of 2.5 W/mm at 2 GHz. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)