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American Physical Society, Physical Review B (Condensed Matter), 6(60), p. 3920-3927, 1999

DOI: 10.1103/physrevb.60.3920

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Vacancy-assisted domain-growth in asymmetric binary alloys: A Monte Carlo Study

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This paper is available in a repository.

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Abstract

A Monte Carlo simulation study of the vacancy-assisted domain growth in asymmetric binary alloys is presented. The system is modeled using a three-state ABV Hamiltonian which includes an asymmetry term. Our simulated system is a stoichiometric two-dimensional binary alloy with a single vacancy which evolves according to the vacancy-atom exchange mechanism. We obtain that, compared to the symmetric case, the ordering process slows down dramatically. Concerning the asymptotic behavior it is algebraic and characterized by the Allen-Cahn growth exponent x51/2. The late stages of the evolution are preceded by a transient regime strongly affected by both the temperature and the degree of asymmetry of the alloy. The results are discussed and compared to those obtained for the symmetric case.