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American Institute of Physics, Applied Physics Letters, 5(101), p. 051903

DOI: 10.1063/1.4739835

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Band gap tunability of molecular beam epitaxy grown lateral composition modulated GaInP structures by controlling V/III flux ratio

Journal article published in 2012 by K. W. Park ORCID, C. Y. Park, Y. T. Lee
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This paper is available in a repository.

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Abstract

Lateral composition modulated (LCM) GaInP structures were grown on (001) GaAs substrate by molecular beam epitaxy with different V/III flux ratios. Band gap of LCM structures could be tuned from 1.93 eV to 1.83 eV by decreasing flux ratio while maintaining the same photoluminescence intensity, enhanced light absorption, and widened absorption spectrum. It is shown that for band gap tuning of LCM structures, flux ratio adjustment is a more viable method compared to growth temperature adjustment. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739835]