Quantum confined Ge nanocrystals embedded in high bandgap and high-k Al(2)O(3) dielectric matrix have been synthesized to demonstrate dual functional devices using Si-compatible fabrication technology. Transmission electron microscopy has shown the formation of Ge nanocrystals of varying diameter from 2.5 to 7.5 nm, much lower than the excitonic Bohr radius of Ge. A broad visible electroluminescence band at room temperature has been observed, which is attributed to the recombination of injected electrons and holes in Ge nanocrystals. An anti-clockwise hysteresis in the capacitance-voltage measurement of these devices indicates the charge storage in nanocrystals, useful for floating gate memory devices.