This paper describes the complete processes from growth to electronic devices of nitrogen-doped single-wall carbon nanotubes (N-SWCNTs). The N-SWCNTs were synthesized using a floating catalyst chemical vapor deposition method. The dry-deposited N-SWCNT films were dispersed in N-methylpyrolidone followed by sonication and centrifugation steps to yield a stable dispersion of N-SWCNTs in solution. The length and diameter distribution as well as concentration of N-SWCNTs in solution were measured by atomic force microscopy and optical absorption spectroscopy, respectively. The N-SWCNTs were then assembled into electronic devices using bottom–up dielectrophoresis and characterized as field-effect transistors. Finally, the potential for application of N-SWCNTs in sensors is discussed. The three stages of N-doped SWCNT processing: (a) growth and collection on filter, (b) dispersion in NMP, and (c) dielectrophoretic assembly into transistor device.