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American Chemical Society, Nano Letters, 6(11), p. 2396-2399, 2011

DOI: 10.1021/nl200758b

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Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

Journal article published in 2011 by Alexander S. Mayorov ORCID, Roman V. Gorbachev, Sergey V. Morozov, Liam Britnell, Rashid Jalil, Leonid A. Ponomarenko, Peter Blake, Kostya S. Novoselov, Kenji Watanabe ORCID, Takashi Taniguchi, R. V. Gorbachev S V. Morozov L Britnell R Jalil L A. Ponomarenko P Blake K S. Novoselov K Watanabe T Taniguchi and A. K. Geim A. S. Mayorov, A. K. Geim, Geim Ak
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This paper is available in a repository.

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Abstract

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.Keywords: Boron nitride; encapsulated graphene; ballistic transport; negative bend resistance; top gate