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American Institute of Physics, Applied Physics Letters, 15(122), 2023

DOI: 10.1063/5.0139200

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Temperature-dependent electroluminescence of stressed and unstressed InAlGaN multi-quantum well UVB LEDs

Journal article published in 2023 by Jakob Höpfner ORCID, Priti Gupta, Martin Guttmann ORCID, Jan Ruschel ORCID, Johannes Glaab ORCID, Tim Kolbe ORCID, Jens Rass ORCID, Arne Knauer ORCID, Christoph Stölmacker ORCID, Sven Einfeldt ORCID, Tim Wernicke ORCID, Markus Weyers ORCID, Michael Kneissl ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

The electroluminescence of UVB light-emitting diodes emitting at 310 nm before and after 1000 h of operation is studied in the temperature range from 20 to 340 K. Before operation, the external quantum efficiency (EQE) at 10 mA gradually increases with decreasing temperature from 0.8% at 340 K to 1.8% at 150 K and then levels off. This trend is attributed to a reduction of non-radiative recombination and finally the domination of radiative recombination at low temperatures. After 1000 h of operation, the EQE has dropped to 0.45% at 340 K with a maximum EQE of 1.4% at 80 K, followed by a drop for temperatures below 80 K. These findings suggest a stress-induced reduction of both the radiative recombination efficiency and the carrier injection efficiency.