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American Institute of Physics, Applied Physics Letters, 26(89), p. 263109

DOI: 10.1063/1.2424446

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Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots

Journal article published in 2006 by Robert Seguin, Andrei Schliwa, T. D. Germann, S. Rodt, K. Pötschke, A. Strittmatter ORCID, U. W. Pohl, Dieter Bimberg, Momme Winkelnkemper, Thomas Hammerschmidt, Peter Kratzer
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This paper is available in a repository.

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Abstract

A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several steps of annealing. A substantial reduction of the excitonic fine-structure splitting upon annealing is observed. In addition, the binding energies of different excitonic complexes change dramatically. The results are compared to model calculations within eight-band k.p theory and the configuration interaction method, suggesting a change of electron and hole wave function shape and relative position. ; Comment: 4 pages, 4 figures