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American Chemical Society, ACS Applied Electronic Materials, 11(4), p. 5379-5386, 2022

DOI: 10.1021/acsaelm.2c01053

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P-Type Ohmic Contact to Monolayer WSe<sub>2</sub> Field-Effect Transistors Using High-Electron Affinity Amorphous MoO<sub>3</sub>

Journal article published in 2022 by Yi-Hsun Chen ORCID, Kaijian Xing ORCID, Song Liu, Luke N. Holtzman, Daniel L. Creedon ORCID, Jeffrey C. McCallum, Kenji Watanabe ORCID, Takashi Taniguchi ORCID, Katayun Barmak, James Hone ORCID, Alexander R. Hamilton, Shao-Yu Chen ORCID, Michael S. Fuhrer ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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