Scaling of Ω-gate SOI nanowire n- and p-FET down to 10nm gate length: Size- and orientation-dependent strain effects
Proceedings article published in 2013 by
S. Barraud,
R. Coquand,
Maffini-Alvaro,
M. P. Samson,
J. M. Hartmann,
L. Tosti,
M. Casse,
Vh Nguyen 
,
F. Triozon,
Y. M. Niquet,
C. Tabone,
P. Perreau,
F. Allain,
C. Vizioz,
C. Comboroure
and other authors.
,
F. Triozon,
Y. M. Niquet,
C. Tabone,
P. Perreau,
F. Allain,
C. Vizioz,
C. Comboroure
and other authors.
