Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 30(9), p. 9484-9491, 2021
DOI: 10.1039/d1tc02354c
Full text: Unavailable
A new building-block of one-dimensional layer-structured CuInSe2/β-In2Se3 lateral p–n junction is realized for high-performance self-powered photodetector.