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IOP Publishing, 2D Materials, 1(9), p. 011002, 2021

DOI: 10.1088/2053-1583/ac3e03

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Impact of domain disorder on optoelectronic properties of layered semimetal MoTe<sub>2</sub>

Distributing this paper is prohibited by the publisher
Distributing this paper is prohibited by the publisher

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Abstract

Abstract We address the impact of crystal phase disorder on the generation of helicity-dependent photocurrents in layered MoTe2, which is one of the van der Waals materials to realize the topological type-II Weyl semimetal phase. Using scanning photocurrent microscopy, we spatially probe the phase transition and its hysteresis between the centrosymmetric, monoclinic 1Tʹ phase to the symmetry-broken, orthorhombic T d phase as a function of temperature. We find a highly disordered photocurrent response in the intermediate temperature regime. Moreover, we demonstrate that helicity-dependent and ultrafast photocurrents in MoTe2 arise most likely from a local breaking of the electronic symmetries. Our results highlight the prospects of local domain morphologies and ultrafast relaxation dynamics on the optoelectronic properties of low-dimensional van der Waals circuits.