Royal Society of Chemistry, Faraday Discussions, (239), p. 70-84, 2022
DOI: 10.1039/d2fd00069e
Full text: Unavailable
Ge doping is employed to aid the recrystallisation of Cu2ZnSnS4 nanocrystals. Opto-electrical properties are presented to describe Ge incorporation with a focus on the electronic interface between the Ge:Cu2ZnSn(S, Se), absorber and CdS buffer layer.