Published in

Royal Society of Chemistry, Faraday Discussions, (239), p. 70-84, 2022

DOI: 10.1039/d2fd00069e

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Ex situ Ge-doping of CZTS nanocrystals and CZTSSe solar absorber films

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Ge doping is employed to aid the recrystallisation of Cu2ZnSnS4 nanocrystals. Opto-electrical properties are presented to describe Ge incorporation with a focus on the electronic interface between the Ge:Cu2ZnSn(S, Se), absorber and CdS buffer layer.