Published in
American Institute of Physics, APL Materials, 12(9), p. 121115, 2021
DOI: 10.1063/5.0070333
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Growth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer p–n diode by substitutional doping
Journal article published in 2021 by
Mitsuhiro Okada 
,
Naoka Nagamura ,
Tarojiro Matsumura ,
Yasunobu Ando ,
Anh Khoa Augustin Lu ,
Naoya Okada ,
Wen-Hsin Chang ,
Takeshi Nakanishi ,
Tetsuo Shimizu ,
Toshitaka Kubo ,
Toshifumi Irisawa ,
Takatoshi Yamada
,
Naoka Nagamura ,
Tarojiro Matsumura ,
Yasunobu Ando ,
Anh Khoa Augustin Lu ,
Naoya Okada ,
Wen-Hsin Chang ,
Takeshi Nakanishi ,
Tetsuo Shimizu ,
Toshitaka Kubo ,
Toshifumi Irisawa ,
Takatoshi Yamada
This paper is made freely available by the publisher.
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