Published in
American Association for the Advancement of Science, Science Advances, 2(7), 2021
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Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa) <sub>2</sub> O <sub>3</sub> on m-plane sapphire
Journal article published in 2021 by
Riena Jinno 
,
Celesta S. Chang ,
Takeyoshi Onuma,
Yongjin Cho ,
Shao-Ting Ho ,
Derek Rowe ,
Michael C. Cao ,
Kevin Lee ,
Vladimir Protasenko ,
Darrell G. Schlom ,
David A. Muller ,
Huili G. Xing ,
Debdeep Jena
,
Celesta S. Chang ,
Takeyoshi Onuma,
Yongjin Cho ,
Shao-Ting Ho ,
Derek Rowe ,
Michael C. Cao ,
Kevin Lee ,
Vladimir Protasenko ,
Darrell G. Schlom ,
David A. Muller ,
Huili G. Xing ,
Debdeep Jena
This paper is made freely available by the publisher.
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Abstract
Crystalline oxides spanning very broad 5.4- to 8.6-eV bandgaps are successfully grown on sapphire by MBE.