Published in

Royal Society of Chemistry, Nanoscale, 40(12), p. 20786-20796, 2020

DOI: 10.1039/d0nr04557h

Links

Tools

Export citation

Search in Google Scholar

Strain tuning of the Stokes shift in atomically thin semiconductors

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Orange circle
Postprint: archiving restricted
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO

Abstract

We measure the Stokes shift of excitonic transitions in 2D semiconductors and tune it by mechanical strain.