This work presents the design and test of a switched-cap 3D DC/DC converter able to work up to 60[Formula: see text]V. The switches and the control circuits are integrated single-chip in a high-voltage (HV) MOS technology, and the passive devices are stacked on top of the chip. As an innovation versus the state-of-the-art, the work first presents the design of integrated passive devices, based on through silicon vias (TSV) MOS-compatible technology, which are suitable for switching converter applications up to 60[Formula: see text]V. Then, the implementation and experimental characterization of the switched-cap 3D DC/DC is proposed, with the silicon TSV capacitors stacked on top of the 0.35[Formula: see text][Formula: see text]m HV-MOS die. Compared with the state-of-the-art, the proposed 3D DC/DC converter is a compact circuit, able to directly regulate a wide input voltage range (from 6[Formula: see text]V to 60[Formula: see text]V) to a 5[Formula: see text]V, 2[Formula: see text]W output. Hence, it is suitable to supply low-power loads, such as control units and/or sensors, directly from the 48[Formula: see text]V power line available in hybrid vehicles or telecom and networking systems.