The Si-doped n-type AIN/GaN distributed bragg reflectors grown on 6H-SiC(0001) were discussed. It was observed that the structures were crack-free and have a stopband centered around 450 nm with a full width at half maximum between 40 and 50 nm. It was also observed that the maximum measured reflectance was ≥99%. It was found that the vertical conductance measurements at room temperature on the samples shown on ohmic I-V behavior in the entire measurement range.