Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 2(66), p. 924-928, 2019
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A Self-Rectifying Resistive Switching Device Based on HfO2/TaO $_{{x}}$ Bilayer Structure
Journal article published in 2019 by
Haili Ma,
Xumeng Zhang 
,
Facai Wu,
Qing Luo ,
Tiancheng Gong,
Peng Yuan,
Xiaoxin Xu,
Yu Liu,
Shengjie Zhao,
Kaiping Zhang,
Cheng Lu,
Peiwen Zhang,
Jie Feng,
Hangbing Lv ,
Ming Liu
,
Facai Wu,
Qing Luo ,
Tiancheng Gong,
Peng Yuan,
Xiaoxin Xu,
Yu Liu,
Shengjie Zhao,
Kaiping Zhang,
Cheng Lu,
Peiwen Zhang,
Jie Feng,
Hangbing Lv ,
Ming Liu
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