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American Institute of Physics, Applied Physics Letters, 1(109), p. 011604

DOI: 10.1063/1.4955453

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Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

Journal article published in 2016 by Aiswarya Pradeepkumar, Neeraj Mishra, Atieh Ranjbar Kermany ORCID, John J. Boeckl, Jack Hellerstedt ORCID, Michael S. Fuhrer, Francesca Iacopi ORCID
This paper is available in a repository.
This paper is available in a repository.

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